Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroshi Itokawa0
Ichiro Mizushima0
Date of Patent
July 26, 2011
0Patent Application Number
122711020
Date Filed
November 14, 2008
0Patent Primary Examiner
Patent abstract
A semiconductor device includes a first semiconductor region having a channel region, and containing silicon as a main component, second semiconductor regions sandwiching the first semiconductor region, formed of SiGe, and applying stress to the first semiconductor region, cap layers provided on the second semiconductor regions, and formed of silicon containing carbon or SiGe containing carbon, and silicide layers provided on the cap layers, and formed of nickel silicide or nickel-platinum alloy silicide.
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