US Patent 7983093 Non-volatile memory cell with BTBT programming

Patent 7983093 was granted and assigned to Synopsys on July, 2011 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Synopsys

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

79830930

Patent Inventor Names

Andrew E. Horch0

Date of Patent

July 19, 2011

Patent Application Number

124104170

Date Filed

March 24, 2009

Patent Primary Examiner

‌

Connie C Yoha

Patent abstract

A Non-Volatile Memory (NVM) cell and programming method in which the cell can denote at least two logic levels (e.g., 0 and 1) and includes a read-transistor with a floating gate and a Band-To-Band-Tunneling device (BTBT device) sharing the floating gate with the read-transistor. The BTBT device is configured as an injection device for injecting a first charge onto the floating gate when the BTBT device is biased so that it is in accumulation, to set at least one of the logic levels.