US Patent 7982315 Semiconductor structure and method of making the same
Patent 7982315 was granted and assigned to Nanya Technology Corporation on July, 2011 by the United States Patent and Trademark Office.
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Edits on 28 Nov, 2023
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Patent abstract
A semiconductor device is provided. An amorphous silicon layer that acts as a UV blocking layer replaces a conventional silicon-rich oxide (SRO) layer or the super silicon-rich oxide (SSRO) layer. By doing this, the process window is increased. In addition, silicon nitride sidewall spacer is formed inside the contact hole to prevent charge loss.
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US Patent 07982315 Semiconductor structure and method of making the same US Patent 7982315 Semiconductor structure and method of making the same
Infobox
Patent Number
0798231500
Patent Number
798231500
Edits on 29 Apr, 2023
Golden AI
Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
079823150
Date of Patent
July 19, 2011
0Patent Application Number
121655870
Date Filed
June 30, 2008
0Patent Primary Examiner
Edits on 23 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
079823150
Date of Patent
July 19, 2011
0Patent Application Number
121655870
Date Filed
June 30, 2008
0Patent Primary Examiner
Edits on 8 Dec, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 07982315 Semiconductor structure and method of making the same
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07982315
Date of patent
July 19, 2011
Patent application number
12165587
Date Filed
June 30, 2008
Patent primary examiner
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