Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 19, 2011
Patent Application Number
12486367
Date Filed
June 17, 2009
Patent Primary Examiner
Patent abstract
Provided are a selection transistor and a method of fabricating the same. A selection transistor can be formed on an active region in a semiconductor substrate to include a gate electrode that includes recessed portions of a sidewall of the gate electrode which are recessed inward adjacent lower portions of the gate electrode to define a T-shaped cross section of the gate electrode. A tunnel insulating layer can be located between the gate electrode and the active region.
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