Patent 7981789 was granted and assigned to Infineon Technologies on July, 2011 by the United States Patent and Trademark Office.
Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.