US Patent 7977708 HBT/FET process integration

Patent 7977708 was granted and assigned to TriQuint Semiconductor on July, 2011 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

TriQuint Semiconductor

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7977708

Date of Patent

July 12, 2011

Patent Application Number

11941065

Date Filed

November 15, 2007

Patent Primary Examiner

‌

Jerome Jackson, Jr.

Patent abstract

A co-integrated HBT/FET apparatus and system, and methods for making the same, are disclosed. A co-integrated HBT/FET apparatus may include a first epitaxial structure formed over a substrate, the first epitaxial structure forming, at least in part, a FET device, a separation layer formed over the first epitaxial structure, and a second epitaxial structure formed over the separation layer, the second epitaxial structure forming, at least in part, a heterojunction bipolar transistor (HBT) device.