Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takeshi Sato0
Hiroyuki Uchiyama0
Mutsuko Hatano0
Tetsufumi Kawamura0
Date of Patent
July 12, 2011
0Patent Application Number
124230530
Date Filed
April 14, 2009
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.
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