US Patent 7977216 Silicon wafer and fabrication method thereof

Patent 7977216 was granted and assigned to MagnaChip Semiconductor on July, 2011 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

MagnaChip Semiconductor

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7977216

Date of Patent

July 12, 2011

Patent Application Number

12500901

Date Filed

July 10, 2009

Patent Primary Examiner

‌

Charles D. Garber

Patent abstract

Provided is a silicon wafer including: a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer; and a bulk area formed between the first denuded zone and a backside of the silicon wafer, wherein the first denuded zone is formed with a depth ranging from approximately 20 um to approximately 80 um from the top surface, and wherein a concentration of oxygen in the bulk area is uniformly distributed within a variation of 10% over the bulk area.