Patent attributes
A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin film transistor substrate having a display area and a non-display area, a gate pattern is formed at the exterior of the display area. A gate insulating film is formed on a substrate provided with a gate pattern, and then a data pattern is formed. And a protective film is formed on an entire substrate provided with a data pattern, and then a conductive pattern, and then a conductive pattern, which is comprised of a pixel electrode which is formed at a display area, and a lower gate pad electrode and a lower data pad electrode which are formed at a non-display area, is formed.
