Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Seung-Nam Cha0
Jae-Eun Jang0
Jae-Eun Jung0
Yong-Wan Jin0
Date of Patent
July 5, 2011
0Patent Application Number
119872500
Date Filed
November 28, 2007
0Patent Citations Received
Patent Primary Examiner
Patent abstract
In a transistor and a method of manufacturing the same, the transistor includes a channel layer arranged on a substrate, a source electrode and a drain electrode formed on the substrate so as to contact respective ends of the channel layer, a gate insulating layer surrounding the channel layer between the source electrode and the drain electrode, and a gate electrode surrounding the gate insulating layer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
