Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hung-Mine Tsai0
Ching-Nan Hsiao0
Chung-Lin Huang0
Date of Patent
July 5, 2011
0Patent Application Number
128393870
Date Filed
July 19, 2010
0Patent Primary Examiner
Patent abstract
A method for manufacturing a memory includes first providing a substrate with a horizontally adjacent control gate region and floating gate region which includes a sacrificial layer and sacrificial sidewalls, removing the sacrificial layer and sacrificial sidewalls to expose the substrate, forming dielectric sidewalls adjacent to the control gate region, forming a floating gate dielectric layer on the exposed substrate and forming a floating gate layer adjacent to the dielectric sidewalls and on the floating gate dielectric layer.
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