Patent attributes
Improved Schottky diodes with reduced leakage current and improved breakdown voltage are provided by building a JFET with its current path of a first conductivity type serially located between a first terminal comprising a Schottky contact and a second terminal. The current path lies (i) between multiple substantially parallel finger regions of a second, opposite, conductivity type substantially laterally outboard of the Schottky contact, and (ii) partly above a buried region of the second conductivity type that underlies a portion of the current path, which regions are electrically coupled to the first terminal and the Schottky contact and which portion is electrically coupled to the second terminal. When reverse bias is applied to the first terminal and Schottky contact the current path is substantially pinched off in vertical or horizontal directions or both, thereby reducing the leakage current and improving the breakdown voltage of the device.
