Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 28, 2011
Patent Application Number
12122227
Date Filed
May 16, 2008
Patent Primary Examiner
Patent abstract
A semiconductor (e.g., complementary metal oxide semiconductor (CMOS)) structure formed on a (110) substrate that has improved performance, in terms of mobility enhancement is provided. In accordance with the present invention, the inventive structure includes at least one of a single tensile stressed liner, a compressively stressed shallow trench isolation (STI) region, or a tensile stressed embedded well, which is used in conjunction with the (110) substrate to improve carrier mobility of both nFETs and pFETs. The present invention also relates to a method of providing such structures.
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