Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chuen-Guang Chao0
Jung-Hsuan Chen0
Ta-Wei Yang0
Date of Patent
June 14, 2011
0Patent Application Number
121178350
Date Filed
May 9, 2008
0Patent Primary Examiner
Patent abstract
The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency.
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