Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kazuaki Nakajima0
Date of Patent
May 31, 2011
0Patent Application Number
129293330
Date Filed
January 14, 2011
0Patent Primary Examiner
Patent abstract
A semiconductor device according to the embodiments comprises a gate insulator formed on a substrate, the gate insulator including a high-dielectric film in whole or part, a reaction film including a first metal on the gate insulator; a metal film including a second metal on the reaction film; and a film including Si formed on the metal film.
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