Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 31, 2011
Patent Application Number
12200969
Date Filed
August 29, 2008
Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor is provided. A fist metal layer can be formed on a lower structural layer, and an interlayer metal dielectric (IMD) layer can be formed on the first metal layer. A sacrificial oxide layer can be formed on the IMD layer, and a planarization process can be performed on the sacrificial oxide layer and the IMD layer to substantially eliminate a height difference of the IMD layer.
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