Patent attributes
A semiconductor laser apparatus of the present invention includes: a semiconductor laser chip 1 having an electrode 11 formed on a surface of the semiconductor laser chip 1; a heat sink 3 for the semiconductor laser chip 1; a submount 2 disposed between the semiconductor laser chip 1 and the heat sink 3 and bonded to the semiconductor laser chip 1 and the heat sink 3; and recessed marks 13 formed on the surface of the semiconductor laser chip 1 by partially removing the electrode 11, wherein the semiconductor laser chip 1 is longer in the resonator direction than in a direction orthogonal to the resonator direction, and the recessed marks 13 are disposed within a predetermined distance from each of the front and rear end faces of the semiconductor laser chip.
