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US Patent 7948321 FET bias circuit

Patent 7948321 was granted and assigned to Japan Radio Co., Ltd. on May, 2011 by the United States Patent and Trademark Office.

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Current Assignee
Japan Radio Co., Ltd.
Japan Radio Co., Ltd.
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
79483210
Patent Inventor Names
Tamaki Honda0
Hironori Sakamoto0
Kenjiro Okadome0
Date of Patent
May 24, 2011
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Patent Application Number
126842510
Date Filed
January 8, 2010
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Patent Primary Examiner
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Hieu P Nguyen
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Patent abstract

A FET bias circuit applies a bias voltage that is not adjusted separately to an amplifying element FET of a FET amplifying circuit. In the FET bias circuit is provided a monitor element FET m having a gate connected to the gate of the amplifying element FET a and a source connected to the source of the amplifying element FET a, respectively, and having a drain current with respect to the bias voltage substantially proportional to the drain current of the amplifying element FET a. In the FET bias circuit is further provided a fixed bias circuit for applying the bias voltage so that the amplifying element FET a enters a predetermined operating class by applying a bias voltage to the monitor element FET m so that a drain current flowing to the monitor element FET m enters a predetermined operating class.

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