Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yuichi Nakao0
Satoshi Kageyama0
Date of Patent
May 24, 2011
0Patent Application Number
122558860
Date Filed
October 22, 2008
0Patent Primary Examiner
Patent abstract
The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof.
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