US Patent 7947523 Method for manufacturing photoelectric conversion device

An embrittlement layer is formed in the single crystal semiconductor substrate and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on one surface of the single crystal semiconductor substrate. After attaching the insulating layer and a supporting substrate to each other to bond the single crystal semiconductor substrate and the supporting substrate, the single crystal semiconductor substrate is separated along the embrittlement layer to form a stack including a first single crystal semiconductor layer. A first semiconductor layer and a second semiconductor layer are formed over the first single crystal semiconductor layer. A second single crystal semiconductor layer is formed by solid phase growth. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer is formed on the second single crystal semiconductor layer. A second electrode is formed on the second impurity semiconductor layer.