Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 10, 2011
Patent Application Number
12648199
Date Filed
December 28, 2009
Patent Primary Examiner
Patent abstract
A manufacturing method of a capacitor of a semiconductor device includes a first step of forming a graphene seed film over a substrate; a second step of increasing surface energy of the graphene seed film and performing a first plasma process to the graphene seed film; a third step of growing a graphene on the graphene seed film; a fourth step of growing a nano tube or a nano wire using the graphene as a mask; and a fifth step of sequentially forming a dielectric film and a conductive layer over the nano tube or the nano wire.
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