Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Albert Z. H. Wang0
Peter Deane0
Chen H. Tsay0
Date of Patent
May 3, 2011
Patent Application Number
11890167
Date Filed
August 2, 2007
Patent Primary Examiner
Patent abstract
A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semiconductor region electrically floats. When the two terminals (A and K) of the ESD protection structure are subjected to an ESD voltage, the structure goes into operation by triggering one of its two inherent thyristors (170 and 180) into a snap-back mode that provides a low impedance path through the structure for discharging the ESD current.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
