Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 3, 2011
Patent Application Number
11782914
Date Filed
July 25, 2007
Patent Primary Examiner
Patent abstract
A nitride semiconductor device includes: a substrate containing Si; a channel layer provided on the substrate and made of nitride semiconductor material; a barrier layer provided on the channel layer and made of nitride semiconductor material; a first and second main electrode connected to the barrier layer; and a control electrode provided between the first main electrode and the second main electrode on the barrier layer. The substrate includes at least one layer having a resistivity of 1 kΩ/cm or more.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
