Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kaizhong Gao0
Haiwen Xi0
Date of Patent
May 3, 2011
0Patent Application Number
122337640
Date Filed
September 19, 2008
0Patent Primary Examiner
Patent abstract
A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.
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