US Patent 7932175 Method to form a via

Patent 7932175 was granted and assigned to Freescale Semiconductor on April, 2011 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Freescale Semiconductor

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7932175

Date of Patent

April 26, 2011

Patent Application Number

11807745

Date Filed

May 29, 2007

Patent Primary Examiner

‌

Chuong A Luu

Patent abstract

A method for forming a via, comprising (a) providing a structure comprising a mask (210) disposed on a semiconductor substrate (203), wherein the structure has an opening (215) defined therein which extends through the mask and into the substrate, and wherein the mask comprises a first electrically conductive layer; (b) depositing a second electrically conductive layer (219) such that the second conductive layer is in electrical contact with the first conductive layer, the second conductive layer having a first portion which extends over the surfaces of the opening and a second portion which extends over a portion of the mask adjacent to the opening; (c) removing the second portion of the second conductive layer; and (d) depositing a first metal (221) over the first portion of the second conductive layer.