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US Patent 7928483 Semiconductor device and method for manufacturing same

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Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7928483
Date of Patent
April 19, 2011
Patent Application Number
12388667
Date Filed
February 19, 2009
Patent Primary Examiner
‌
Thien F. Tran
Patent abstract

A hard mask material film is formed on a semiconductor substrate and a recess is formed immediately below an opening in an upper surface of the semiconductor substrate. Next, a p-type region is formed immediately below the recess by implanting impurities into an imaging region using the hard mask material film as a mask. Moreover, a trench is formed by further processing the recess in a processing region. A half-buried dielectric film and a STI are formed by burying a dielectric material in the recess and the trench to remove the hard mask material film. Next, two electrodes are formed so as to overlap the half-buried dielectric film and the STI, respectively, and impurities are implanted into the imaging region using one electrode and the half-buried dielectric film as a mask, and hence a n-type region constituting a photodiode is formed in a region being in contact with the p-type region in the semiconductor substrate.

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