Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Naruhisa Miura0
Keiko Fujihira0
Kenichi Ohtsuka0
Masayuki Imaizumi0
Date of Patent
April 19, 2011
0Patent Application Number
120904510
Date Filed
October 6, 2006
0Patent Primary Examiner
Patent abstract
The present invention provides a MOSFET and so forth that offer high breakdown voltage and low on-state loss (high channel mobility and low gate threshold voltage) and that can easily achieve normally OFF. A drift layer 2 of a MOSFET made of silicon carbide according to the present invention has a first region 2a and a second region 2b. The first region 2a is a region from the surface to a first given depth. The second region 2b is formed in a region deeper than the first given depth. The impurity concentration of the first region 2a is lower than the impurity concentration of the second region 2b.
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