Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tsuyoshi Ohgoh0
Date of Patent
April 19, 2011
0Patent Application Number
122121760
Date Filed
September 17, 2008
0Patent Primary Examiner
Patent abstract
An end face emission type semiconductor light emitting device which include: a substrate; a first conductive type clad layer stacked on the substrate; an active region layer including an active layer stacked on the first conductive type clad layer; a second conductive type clad layer stacked on the active region layer such that a thickness of a portion thereof at least over an emission region of the active region layer in an emission end face adjacent area is thinner than a thickness of the other portion; and a second conductive type regrowth layer stacked on the second conductive type clad layer, which has a higher refractive index than the second conductive type clad layer.
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