Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 5, 2011
Patent Application Number
12062262
Date Filed
April 3, 2008
Patent Primary Examiner
Patent abstract
A method for fabricating a low-value resistor such as a ballast resistor for bipolar junction transistors. The resistor may be fabricated using layers of appropriate sheet resistance so as to achieve low resistance values in a compact layout. The method may rely on layers already provided by a conventional CMOS process flow, such as contact plugs and fully silicided (FUSI) metal gates.
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