US Patent 7910417 Distributed high voltage JFET

Patent 7910417 was granted and assigned to Texas Instruments on March, 2011 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Texas Instruments

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7910417

Date of Patent

March 22, 2011

Patent Application Number

12176488

Date Filed

July 21, 2008

Patent Primary Examiner

‌

Hoai V Pham

Patent abstract

A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.