US Patent 7910394 Photodiode with improved charge capacity

Patent 7910394 was granted and assigned to Foveon on March, 2011 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Foveon

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

79103940

Patent Inventor Names

Maxim Ershov0

Date of Patent

March 22, 2011

Patent Application Number

120607020

Date Filed

April 1, 2008

Patent Primary Examiner

‌

Charles D. Garber

Patent abstract

A method for forming a photodiode cathode in an integrated circuit imager includes defining and implanting a photodiode cathode region with a photodiode cathode implant dose of a dopant species and defining and implanting an edge region of the photodiode cathode region with a photodiode cathode edge implant dose of a dopant species to form a region of higher impurity concentration than the photodiode cathode impurity concentration.