Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masaya Sumita0
Date of Patent
March 15, 2011
0Patent Application Number
124297580
Date Filed
April 24, 2009
0Patent Primary Examiner
Patent abstract
A semiconductor integrated circuit has a first substrate of a first polarity to which a first substrate potential is given, a second substrate of the first polarity to which a second substrate potential different from the first substrate potential is given, and a third substrate of a second polarity different from the first polarity. The first substrate is insulated from a power source or ground to which a source of a MOSFET formed on the substrate is connected. The third substrate is disposed between the first and second substrates in adjacent relation to the first and second substrates. A circuit element is formed on the third substrate.
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