Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 15, 2011
Patent Application Number
12275332
Date Filed
November 21, 2008
Patent Primary Examiner
Patent abstract
A laser annealing method for manufacturing a semiconductor device is presented. The method includes at least two forming steps and one annealing step. The first forming steps includes forming gates on a semiconductor substrate. The second forming step includes forming an insulation layer on the semiconductor substrate and on the gates. The annealing step includes annealing the insulation layer using electromagnetic radiation emitted from a laser.
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