Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshihide Ieki0
Megumi Nakayama0
Ryuta Nakano0
Satoru Kitou0
Hajime Inagaki0
Date of Patent
March 15, 2011
Patent Application Number
11884772
Date Filed
February 7, 2006
Patent Primary Examiner
Patent abstract
A vapor deposited film is formed on a base material surface by a plasma CVD method where an organic metal compound and an oxidizing gas are used as a reactive gas. The vapor deposited film has three sections of a base material side adhesive layer having 5% or more carbon, a barrier intermediate layer having less than 5% carbon, and a surface protection film having 5% or more carbon, by element concentration with respect to the total amount of three elements of a metal element (M), oxygen (O) and carbon (C) derived from the organic metal compound. The vapor deposited film has excellent adhesiveness to the base material, and has excellent resistance to water, especially to alkaline aqueous solutions, as well.
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