US Patent 7894251 Semiconductor memory device

The present invention provides a semiconductor memory device capable of preventing erroneous writing of a data signal. In DL drivers of an MRAM, transistors corresponding to a selected digit line group are made conductive to charge 16 digit lines to power supply voltage and charge a node to a predetermined voltage VP1=VDD−VTH1. After that, a transistor corresponding to the selected digit line is made conductive to make magnetization current flow. Therefore, occurrence of overshooting of magnetization current when the transistor is made conductive can be prevented.