Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 22, 2011
Patent Application Number
12314582
Date Filed
December 12, 2008
Patent Primary Examiner
Patent abstract
A recessed channel transistor includes a single crystalline silicon substrate having a recessed portion, a bottom surface of the recessed portion including an elevated central portion, a channel doping region in the single crystalline silicon substrate, the channel doping region being under the bottom surface of the recessed portion, a gate structure in the recessed portion, and source/drain regions in the single crystalline silicon substrate at both sides of the recessed portion, the source/drain regions being spaced apart from the bottom surface of the recessed portion.
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