Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 22, 2011
Patent Application Number
12511444
Date Filed
July 29, 2009
Patent Primary Examiner
Patent abstract
A semiconductor device and a method for manufacturing the same include forming a second copper-plated layer over a second IMD layer and inside a second aperture formed in the second IMD by an electroplating process that uses the exposed first copper-plated layer as a seed layer. With the method, the copper-plated layer may be more simply and rapidly formed and achieve superior gap filling characteristics.
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