US Patent 7888636 Measuring energy contamination using time-of-flight techniques
Patent 7888636 was granted and assigned to Varian Semiconductor Equipment Associates on February, 2011 by the United States Patent and Trademark Office.
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Techniques for measuring energy contamination using time-of-flight (TOF) sensor are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for detecting energy contamination in an ion beam using time-of-flight comprising directing an ion beam towards an entrance of a sensor, wherein the ion beam may include charged particles and neutral particles, blocking the ion beam periodically from entering the sensor and allowing a pulse of the ion beam to enter the sensor periodically using a gate mechanism, separating the charged particles and the neutral particles of the ion beam pulse based at least in part upon different transit times over a distance caused by variations in at least one of mass and energy associated with the charged particles and the neutral particles, and detecting at least one of the charged particles and the neutral particles separately at a detector based at least in part upon the different transit times.
US Patent 07888636 Measuring energy contamination using time-of-flight techniques US Patent 7888636 Measuring energy contamination using time-of-flight techniques
US Patent 07888636 Measuring energy contamination using time-of-flight techniques
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