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US Patent 7888222 Method of fabricating a lateral double-diffused MOSFET

Patent 7888222 was granted and assigned to Volterra Semiconductor on February, 2011 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
1
Date Filed
February 22, 2007
1
Date of Patent
February 15, 2011
1
Patent Application Number
11677724
1
Patent Citations Received
‌
US Patent 12119343 Semiconductor structure having a semiconductor substrate and an isolation component
2
‌
US Patent 11710787 Laterally diffused metal oxide semiconductor device and method for manufacturing the same
3
‌
US Patent 11887889 Semiconductor device and method for manufacturing the same
4
‌
US Patent 11942540 Semiconductor device and method for manufacturing the same
5
‌
US Patent 11949010 Metal oxide semiconductor device and method for manufacturing the same
6
‌
US Patent 11967644 Semiconductor device comprising separate different well regions with doping types
7
Patent Inventor Names
Budong You
1
Marco A. Zuniga
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
7888222
1
Patent Primary Examiner
‌
Dung A. Le
1

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