Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 8, 2011
Patent Application Number
12062072
Date Filed
April 3, 2008
Patent Primary Examiner
Patent abstract
A semiconductor device includes an Nch transistor having a first gate electrode and a Pch transistor having a second gate electrode. The first gate electrode and the second gate electrode are made of materials causing stresses of different magnitudes.
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