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US Patent 7869270 Set algorithm for phase change memory cell

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Patent
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
78692700
Patent Inventor Names
Ming-Hsiu Lee0
Date of Patent
January 11, 2011
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Patent Application Number
123453840
Date Filed
December 29, 2008
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Patent Primary Examiner
‌
David Lam
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Patent abstract

Memory devices and methods for operating such devices are described herein. A method is described herein for operating a memory cell comprising phase change material and programmable to a plurality of resistance states including a high resistance state and a lower resistance state. The method comprises applying a first bias arrangement to the memory cell to establish the lower resistance state, the first bias arrangement comprising a first voltage pulse. The method further comprises determining whether the memory cell is in the lower resistance state, and if the memory cell is not in the lower resistance state then applying a second bias arrangement to the memory cell. The second bias arrangement comprises a second voltage pulse having a pulse height greater than that of the first voltage pulse.

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