Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kyoung-Hwa Jung0
Date of Patent
January 11, 2011
Patent Application Number
12495887
Date Filed
July 1, 2009
Patent Primary Examiner
Patent abstract
A method for forming silicide in a semiconductor device includes simultaneously performing a cleaning process and an etching process to remove a silicide metal layer if an excessive delay in time lapses after forming the silicide metal layer. This may prevent the occurrence of liquid marks due to an oxidation reaction at an interface of the semiconductor substrate in contact with the silicide metal layer, thereby preventing silicide defects due to the excessive delay.
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