US Patent 7867882 Method of manufacturing silicon carbide semiconductor device
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Patent abstract
A method of manufacturing an SiC semiconductor device includes the steps of ion implanting a dopant at least in a part of a surface of an SiC single crystal, forming an Si film on the surface of the ion-implanted SiC single crystal, and heating the SiC single crystal on which the Si film is formed to a temperature not less than a melting temperature of the Si film.
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Patent Inventor Names
Kazuhiro Fujikawa0
Takeyoshi Masuda0
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US Patent 07867882 Method of manufacturing silicon carbide semiconductor device US Patent 7867882 Method of manufacturing silicon carbide semiconductor device
Infobox
Patent Number
078678820
Patent Number
78678820
Edits on 26 Sep, 2022
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Patent Jurisdiction
Patent Number
078678820
Date of Patent
January 11, 2011
0Patent Application Number
124445510
Date Filed
August 13, 2007
0Official Website
Patent Primary Examiner
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US Patent 07867882 Method of manufacturing silicon carbide semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07867882
Date of patent
January 11, 2011
Patent application number
12444551
Date Filed
August 13, 2007
Patent primary examiner
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