US Patent 7867560 Method for performing a vapor deposition process

Patent 7867560 was granted and assigned to Tokyo Electron on January, 2011 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Tokyo Electron

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7867560

Patent Inventor Names

Kenji Suzuki0

Date of Patent

January 11, 2011

Patent Application Number

11692801

Date Filed

March 28, 2007

Patent Primary Examiner

‌

David Turocy

Patent abstract

A method for performing a vapor deposition process is described. The vapor deposition process involves the deposition of a thin film, such as a ruthenium (Ru), rhenium (Re) or rhodium (Rh) film, on a substrate using a solid-phase or liquid-phase precursor. The method facilitates the initiation of gas lines to supply dilution gas(es), carrier gas(es) and precursor vapor to the deposition system, the pre-heating and heating of the substrate, the pre-conditioning of the film precursor vaporization system, and the flow stabilization of the carrier gas(es) and the precursor vapor, for example.