US Patent 7863682 SIC semiconductor having junction barrier Schottky diode

Patent 7863682 was granted and assigned to Denso on January, 2011 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Denso

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

78636820

Patent Inventor Names

Takeo Yamamoto0

Eiichi Okuno0

Date of Patent

January 4, 2011

Patent Application Number

120783500

Date Filed

March 31, 2008

Patent Primary Examiner

‌

Long K. Tran

Patent abstract

A semiconductor device having a junction barrier Schottky diode includes: a SiC substrate; a drift layer on the substrate; an insulation film on the drift layer having an opening in a cell region; a Schottky barrier diode having a Schottky electrode contacting the drift layer through the opening of the insulation film and an ohmic electrode on the substrate; a terminal structure having a RESURF layer surrounding the cell region; and multiple second conductive type layers on an inner side of the RESURF layer. The second conductive type layers and the drift layer provide a PN diode. The Schottky electrode includes a first Schottky electrode contacting the second conductive type layers with ohmic contact and a second Schottky electrode contacting the drift layer with Schottky contact.