Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshitaka Kinoshita0
Hidenori Kamei0
Date of Patent
January 4, 2011
Patent Application Number
12066465
Date Filed
September 12, 2006
Patent Primary Examiner
Patent abstract
A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer 12; and a second-conductivity-type layer 14 formed on the active layer 13, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer 12 includes an intermediate layer 23 made of Ga1-xInxN (0<x<1).
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
