Patent attributes
An electrostatic protection circuit, includes a first terminal, a second terminal, a MOS transistor including a gate, a source, and a drain, the gate being coupled to the first terminal, the source being coupled to the second terminal, and an electrostatic protection element connected to the drain, wherein the electrostatic protection element includes a first electrostatic protection element, and a second electrostatic protection element connected between the first terminal and the second terminal. The electrostatic protection circuit is constructed such that a maximum value of a voltage applied to a gate insulating film of the MOS transistor is alleviated to a value equal to or smaller than a desirable value by a current flowing into the first electrostatic protection element at a time of electrostatic application to the first terminal and an internal parasitic resistance of the MOS transistor connected with the second terminal.
