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US Patent 7858152 Chemical vapor deposition of chalcogenide materials via alternating layers

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Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
78581521
Patent Inventor Names
Stanford R. Ovshinsky1
Smuruthi Kamepalli1
Date of Patent
December 28, 2010
1
Patent Application Number
122844251
Date Filed
September 22, 2008
1
Patent Primary Examiner
‌
David Turocy
1
Patent abstract

A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

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