Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chikara Watatani0
Toru Takiguchi0
Date of Patent
December 21, 2010
0Patent Application Number
120341950
Date Filed
February 20, 2008
0Patent Primary Examiner
Patent abstract
A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2 film (insulating film) is formed on the semiconductor film, and the SiO2 film is patterned. The semiconductor film is etched using the SiO2 film as a mask to form a mesa structure. The surface of the SiO2 film is treated by ashing, using SF6 gas (fluorine-containing gas), to terminate the surface of the SiO2 film with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiO2 film having the surface that has been terminated by fluorine, as a mask.
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