Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 14, 2010
Patent Application Number
12013969
Date Filed
January 14, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
In an embodiment, a memory device, including: a semiconductor fin structure, each end portion of the fin structure including a source/drain region; a charge storage layer covering at least a portion of the fin structure; and a gate layer covering at least a portion of the charge storage layer.
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